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MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral

MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral

  • MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral
MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral
Product Details:
Place of Origin: USA
Brand Name: Freescale
Certification: IEC
Model Number: MRF6V2150NBR1
Payment & Shipping Terms:
Minimum Order Quantity: 1 piece
Price: negotiable
Packaging Details: factory standard packing
Delivery Time: 1-2 working days
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10000 pieces per year
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Detailed Product Description
Drain Source Voltage: 110Vdc Gate Source Voltage: 12V
Operating Junction Temperature: 225°C Case Operating Temperature: 150°C
Storage Temperature: -65 To +165°C Voltage: 50V
High Light:

high power mosfet transistors

,

n channel mosfet transistor

MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs

 

Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

 

Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.

 

Manufacturer USA Inc.  
Series -  
Packaging ? Tape & Reel (TR) ?  
Part Status Not For New Designs  
Transistor Type LDMOS  
Frequency 220MHz  
Gain 25dB  
Voltage - Test 50V  
Current Rating -  
Noise Figure -  
Current - Test 450mA  
Power - Output 150W  
Voltage - Rated 110V  
Package / Case TO-272BB  
Supplier Device Package TO-272 WB-4  
Base Part Number MRF6V2150

 

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Contact Details
Shenzhen Koben Electronics Co., Ltd.

Contact Person: Mr. Zhu

Tel: 86-13040862868

Fax: 86-755-23816038

Send your inquiry directly to us (0 / 3000)

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