H2M 2 Stage Amp Transistor Replacement RA60H4452M1-101 For Mobile Radio

RA60H4452M1-101 440-520MHz 60W 12.5V, 2 Stage Amp. Power Transistor For MOBILE RADIO

DESCRIPTION

The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power

FEATURES

1, Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

2, Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

3, Broadband Frequency Range: 440-520MHz

4, Metal shield structure that makes the improvements of spurious radiation simple

5, Low-Power Control Current IGG=5mA (typ) @ VGG=5V

6, Module Size: 67 x 18 x 9.9 mm

7, Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.