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IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK

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Good quality Programmable IC Chip for sales
Good quality Programmable IC Chip for sales
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IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK

China IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK supplier
IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK supplier IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK supplier

Large Image :  IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK

Product Details:

Place of Origin: CN
Brand Name: IOR
Certification: CE
Model Number: IRF640NSTRLPBF

Payment & Shipping Terms:

Minimum Order Quantity: 100 pieces
Price: negotiable
Packaging Details: Tape and Reel
Delivery Time: 1-2 working days
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 100Kpcs per year
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Detailed Product Description
Goods Condition: Brand New Part Status: Active
Lead Free / Rohs: Complaint Function: Mosfet
Mounting Type: Surface Mount Package: D2PAK

IRF640NSTRLPBF N-Channel Mosfet Transistor 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK

 

 Advanced Process Technology 

Dynamic dv/dt Rating  175°C Operating Temperature 

Fast Switching  Fully Avalanche Rated 

Ease of Paralleling 

Simple Drive Requirements

 

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.

 

Manufacturer Infineon Technologies  
Series HEXFET®  
Packaging ? Tape & Reel (TR) ?  
Part Status Active  
FET Type N-Channel  
Technology MOSFET (Metal Oxide)  
Drain to Source Voltage (Vdss) 200V  
Current - Continuous Drain (Id) @ 25°C 18A (Tc)  
Drive Voltage (Max Rds On, Min Rds On) 10V  
Vgs(th) (Max) @ Id 4V @ 250µA  
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V  
Vgs (Max) ±20V  
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V  
FET Feature -  
Power Dissipation (Max) 150W (Tc)  
Rds On (Max) @ Id, Vgs 150 mOhm @ 11A, 10V  
Operating Temperature -55°C ~ 175°C (TJ)  
Mounting Type Surface Mount  
Supplier Device Package D2PAK  
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

 

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