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N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching

N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching

  • N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching
N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching
Product Details:
Place of Origin: CHINA
Brand Name: IOR
Certification: ROHS
Model Number: IRF540NS
Payment & Shipping Terms:
Minimum Order Quantity: 20 pcs
Price: negotiate
Packaging Details: 800PCS/Standard Package
Delivery Time: 2-3 working days
Payment Terms: Western Union, T/T,Paypal
Supply Ability: Consultation
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Detailed Product Description
FET Type: N-Channel Drain To Source Voltage: 100V
Operating Temperature: -55°C ~ 175°C
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Mosfet Power Transistor IRF540NS

IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching

Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.

Product Attributes

FET Type N-Channel
Technology MOSFET 
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 33A 
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 44 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Operating Temperature -55°C ~ 175°C

Contact Details
Shenzhen Koben Electronics Co., Ltd.

Contact Person: Mr. Zhu

Tel: 86-13040862868

Fax: 86-755-23816038

Send your inquiry directly to us (0 / 3000)

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