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| Place of Origin: | CHINA |
| Brand Name: | VISHAY |
| Certification: | ROHS |
| Model Number: | SIHB22N60E-E3 |
| Minimum Order Quantity: | 5 pcs |
|---|---|
| Price: | negotiate |
| Packaging Details: | 2500pieces/reel |
| Delivery Time: | 2-3 working days |
| Payment Terms: | Western Union, T/T,Paypal |
| Supply Ability: | 400pcs |
| FET Type: | N-channel | Operating Temperature: | -55°C ~ 150°C (TJ) |
|---|---|---|---|
| Package: | TO263-3 D2PAK | ||
| Highlight: | n channel mosfet transistor,n channel transistor |
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High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK
| Manufacturer | Vishay Siliconix | |
|---|---|---|
| Series | - | |
| Packaging | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1920pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 227W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Contact Person: Mr. Zhu
Tel: 86-13040862868
Fax: 86-755-23816038
