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High Performance IGBT Power Module 2270W 1mA Half Bridge Configuration

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High Performance IGBT Power Module 2270W 1mA Half Bridge Configuration

High Performance IGBT Power Module 2270W 1mA Half Bridge Configuration
High Performance IGBT Power Module 2270W 1mA Half Bridge Configuration

Large Image :  High Performance IGBT Power Module 2270W 1mA Half Bridge Configuration

Product Details:

Brand Name: KOBEN

Payment & Shipping Terms:

Minimum Order Quantity: 1 piece
Price: USD 99.0 per piece
Packaging Details: standard factory packing
Delivery Time: 1-3 working days
Payment Terms: T/T, Western Union,Paypal
Supply Ability: 1000 pieces per year
Detailed Product Description
Part Status: Active Current - Collector (Ic): 300A
Current - Collector Cutoff: 1mA Supplier Device Package: Module
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high power igbt module

Part Status Active  
IGBT Type -  
Configuration Half Bridge  
Voltage - Collector Emitter Breakdown (Max) 1200V  
Current - Collector (Ic) (Max) 300A  
Power - Max 2270W  
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 300A  
Current - Collector Cutoff (Max) 1mA  
Input Capacitance (Cies) @ Vce 30nF @ 10V  
Input Standard  
NTC Thermistor No  
Operating Temperature -40°C ~ 150°C (TJ)  
Mounting Type Chassis Mount  
Package / Case Module  
Supplier Device Package Module

Contact Details
Shenzhen Koben Electronics Co., Ltd.

Contact Person: Zhu

Tel: 86-13040862868

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