 |
| Place of Origin: | JP |
| Brand Name: | Fuji Electric |
| Certification: | IEC |
| Model Number: | FLM0910-25F |
| Minimum Order Quantity: | 1 piece |
|---|---|
| Price: | negotiable |
| Packaging Details: | factory standard packing |
| Delivery Time: | 1-2 working days |
| Payment Terms: | T/T, Western Union, Paypal |
| Supply Ability: | 10000 pieces per year |
| Drain-Source Voltage: | 15V | Gate-Source Voltage: | -5V |
|---|---|---|---|
| Total Power Dissipation: | 93.7W | Storage Temperature: | -65 To +175℃ |
| Channel Temperature: | 175℃ | Max Drain Current: | 16.2A |
| Highlight: | high power mosfet transistors,n channel transistor |
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET
DESCRIPTION
The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem
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| TC58DVM92A5TA00 | TOSHIBA | DRV8312DDWR | TI | |
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| XC3S200-4TQ144C | XILINX | 88F6-BK12 | MARVELL | |
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| FT1760N | FANGTEK | LMH6654MAX | NSC | |
| SN8P2754KG | SONIX | LCMXO640C-3FT256C | LATTICE | |
Contact Person: Mr. Zhu
Tel: 86-13040862868
Fax: 86-755-23816038
