Product Details:
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| Drain To Source Voltage: | 50V | Gate To Source Voltage: | 20V |
|---|---|---|---|
| Channel Dissipation: | 176.5W | Input Power: | 12.5W |
| Drain Current: | 25A | Storage Temperature: | -40 To +175°C |
| High Light: | n channel mosfet transistor,n channel transistor,25A 12.5W Mosfet Power Transistor |
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RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications
FEATURES
• High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
• High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
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Contact Person: Mr. Zhu
Tel: 86-13040862868
Fax: 86-755-23816038
