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Enhancement Type Mosfet N Channel Transistor 45W 12.5V RA45H4045MR-101

Enhancement Type Mosfet N Channel Transistor 45W 12.5V RA45H4045MR-101

  • Enhancement Type Mosfet N Channel Transistor 45W 12.5V RA45H4045MR-101
  • Enhancement Type Mosfet N Channel Transistor 45W 12.5V RA45H4045MR-101
Enhancement Type Mosfet N Channel Transistor 45W 12.5V RA45H4045MR-101
Product Details:
Place of Origin: JP
Brand Name: Mitsubishi
Certification: IEC
Model Number: RA45H4045MR-101
Payment & Shipping Terms:
Minimum Order Quantity: 1 piece
Price: negotiable
Packaging Details: factory standard packing
Delivery Time: 1-2 working days
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10000 pieces per year
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Detailed Product Description
Condition: 100% Brand New Product Part Status: Active
Package: H2S Lead Free Status / RoHS Status: Compliant
Output Power: 45W Voltage: 12.5V
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high power mosfet transistors

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n channel mosfet transistor

R45H4045MR-101 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

 

DESCRIPTION

The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

 

FEATURES

1, Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW

2, Broadband Frequency Range: 400-450MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V

3, Module Size: 66 x 21 x 9.88 mm

4, Reverse PIN type • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

 

 

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Enhancement Type Mosfet N Channel Transistor 45W 12.5V RA45H4045MR-101 0 

Contact Details
Shenzhen Koben Electronics Co., Ltd.

Contact Person: Zhu

Tel: 86-13040862868

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