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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

  • RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V
RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V
Product Details:
Place of Origin: JP
Brand Name: Mitsubishi
Certification: IEC
Model Number: RA30H1317M
Payment & Shipping Terms:
Minimum Order Quantity: 1 piece
Price: negotiable
Packaging Details: factory standard packing
Delivery Time: 1-2 working days
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10000 pieces per year
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Detailed Product Description
Condition: 100% Brand New Product Part Status: Active
Package: H2S Lead Free Status / RoHS Status: Compliant
Output Power: 30W Voltage: 12.5V
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RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V

 

DESCRIPTION

 

The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

 

FEATURES

1, Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V) • Pout>30W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

2, Broadband Frequency Range: 135-175MHz

3, Low-Power Control Current IGG=1mA (typ) at VGG=5V

4, Module Size: 66 x 21 x 9.88 mm

5, Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

 

 

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V 0 

Contact Details
Shenzhen Koben Electronics Co., Ltd.

Contact Person: Mr. Zhu

Tel: 86-13040862868

Fax: 86-755-23816038

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