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45 Watt 12.8V 2 Stage Power Amp Transistor RA45H8994M1-101 IEC Standard

45 Watt 12.8V 2 Stage Power Amp Transistor RA45H8994M1-101 IEC Standard

  • 45 Watt 12.8V 2 Stage Power Amp Transistor RA45H8994M1-101 IEC Standard
45 Watt 12.8V 2 Stage Power Amp Transistor RA45H8994M1-101 IEC Standard
Product Details:
Place of Origin: JP
Brand Name: Mitsubishi
Certification: IEC
Model Number: RA45H8994M1-101
Payment & Shipping Terms:
Minimum Order Quantity: 1 piece
Price: negotiable
Packaging Details: factory standard packing
Delivery Time: 1-2 working days
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10000 pieces per year
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Detailed Product Description
Condition: 100% Brand New Product Part Status: Active
Package: H2M Lead Free Status / RoHS Status: Compliant
Output Power: 45W Voltage: 12.8V
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RA45H8994M1-101 896-941MHz 45W 12.8V, 2 Stage Amp. RF transistor For MOBILE RADIO

 

DESCRIPTION

 

The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate voltage 2 around 0V (minimum) under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power becomes available at the state that VGG2 is 4V (typical) and 5V (maximum). At this point, VGG1 has to be kept in 3.4V. At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power.

 

FEATURES

 

1, Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG1=VGG2=0V)

2, Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW

3, Broadband Frequency Range: 896-941MHz • Metal cap structure that makes the improvements of RF radiation simple

4, Low-Power Control Current IGG1+IGG2=0.4mA(typ) @ VGG1=3.4V, VGG2=5V • Module Size: 67 x 18 x 9.9 mm

5, Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.

 

45 Watt 12.8V 2 Stage Power Amp Transistor RA45H8994M1-101 IEC Standard 0

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Contact Details
Shenzhen Koben Electronics Co., Ltd.

Contact Person: Zhu

Tel: 86-13040862868

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