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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

Large Image :  RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

Product Details:

Place of Origin: CN
Brand Name: Mitsubishi
Certification: CE
Model Number: RD06HVF1

Payment & Shipping Terms:

Minimum Order Quantity: 50 pieces
Price: negotiable
Packaging Details: plastic tube
Delivery Time: 1-2 working days
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10Kpcs per year
Detailed Product Description
Goods Condition: Brand New Part Status: Active
Lead Free / Rohs: Complaint Function: Amp
Mounting Type: Throught Hole Package: TO220
High Light:

high power mosfet transistors

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n channel mosfet transistor

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RF Power Transistor 175MHz 6W

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications

 

Description of RD06HVF1

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications

 

FEATURES of RD06HVF1

High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

 

APPLICATION of RD06HVF1

For output stage of high power amplifiers in VHF band mobile radio sets.

 

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Shenzhen Koben Electronics Co., Ltd.

Contact Person: Zhu

Tel: 86-13040862868

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