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IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC

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IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC

IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC
IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC

Large Image :  IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC

Product Details:

Place of Origin: CHINA
Brand Name: IOR
Certification: ROHS
Model Number: IRFP260NPBF

Payment & Shipping Terms:

Minimum Order Quantity: 10 pcs
Price: negotiate
Packaging Details: 25/tube
Delivery Time: 2-3 working days
Payment Terms: Western Union, T/T,Paypal
Supply Ability: 20Kpcs
Detailed Product Description
FET Type: N-Channel Drain To Source Voltage: 200V
Current - Continuous Drain: 50A Power Dissipation: 300W
Operating Temperature: -55°C ~ 175°C
High Light:

high power mosfet transistors

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n channel mosfet transistor

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IRFP260NPBF Mosfet Power Transistor

IRFP260NPBF N-Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant

Other Name:64-6005PBF

Feature
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
l Lead-Free
FET Type N-Channel  
Technology MOSFET (Metal Oxide)  
Drain to Source Voltage (Vdss) 200V  
Current - Continuous Drain (Id) @ 25°C 50A   
Drive Voltage (Max Rds On, Min Rds On) 10V  
Rds On (Max) @ Id, Vgs 40 mOhm @ 28A, 10V  
Vgs(th) (Max) @ Id 4V @ 250µA  
Gate Charge (Qg) (Max) @ Vgs 234nC @ 10V  
Vgs (Max) ±20V  
Input Capacitance (Ciss) (Max) @ Vds 4057pF @ 25V  
FET Feature -  
Power Dissipation (Max) 300W (Tc)  
Operating Temperature -55°C ~ 175°C (TJ)  
Mounting Type Through Hole  
Supplier Device Package TO-247AC

 

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Contact Details
Shenzhen Koben Electronics Co., Ltd.

Contact Person: Zhu

Tel: 86-13040862868

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