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| Place of Origin: | CHINA |
| Brand Name: | IOR |
| Certification: | ROHS |
| Model Number: | IRFPF50PBF |
| Minimum Order Quantity: | 20pcs |
|---|---|
| Price: | negotiate |
| Packaging Details: | 50PCS/Standard Package |
| Delivery Time: | 2-3 working days |
| Payment Terms: | Western Union, T/T,Paypal |
| Supply Ability: | Consultation |
| FET Type: | N-Channel | Drain To Source Voltage (Vdss): | 900V |
|---|---|---|---|
| Vgs (Max): | ±20V | Operating Temperature: | -55°C ~ 150°C |
| High Light: | resolver to digital converter ic,integrated circuit chip |
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IRFPF50PBF N-Channel MOSFET 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching • Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
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Contact Person: Mr. Zhu
Tel: 86-13040862868
Fax: 86-755-23816038
